Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25100DZ User Manual
Page 5
ZXTN25100DZ
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
BV
CBO
180
220
V
I
C
= 100
μA
Collector-Emitter
breakdown voltage
(forward blocking)
BV
CEX
180
220
V
I
C
= 100
μA, R
BE
< 1k
Ω or
-1V > V
BE
> 0.25V
Collector-Emitter
breakdown voltage
BV
CEO
100
130
V
I
C
= 10mA
(*)
NOTES:
(*)Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECX
6
8.2
V
I
E
= 100
μA, R
BC
< 1k
Ω or
0.25V > V
BC
> -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECO
6
8.7
V
I
E
= 100
μA
Emitter-Base breakdown
voltage
BV
EBO
7
8.3
V
I
E
= 100
μA
Collector-Base cut-off
current
I
CBO
<1
50
0.5
nA
μA
V
CB
= 180V
V
CB
=180V,T
amb
=100°C
Collector-Emitter cut-off
current
I
CEX
100
nA
V
CE
= 100V, R
BE
< 1k
Ω or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-Emitter
saturation voltage
V
CE(sat)
120
80
220
170
100
345
mV
mV
mV
I
C
= 0.5A, I
B
= 10mA
(*)
I
C
= 1A, I
B
= 100mA
(*)
I
C
= 2.5A, I
B
= 250mA
(*)
Base-Emitter saturation
voltage
V
BE(sat)
935
1000
mV
I
C
= 2.5A, I
B
= 250mA
(*)
Base-Emitter turn-on
voltage
V
BE(on)
890
950
mV
I
C
= 2.5A, V
CE
= 2V
(*)
Static forward current
transfer ratio
h
FE
300
120
40
450
170
60
20
900
I
C
= 10mA, V
CE
= 2V
(*)
I
C
= 0.5A, V
CE
= 2V
(*)
I
C
= 1A, V
CE
= 2V
(*)
I
C
= 2.5A, V
CE
= 2V
(*)
Transition frequency
f
T
175
MHz
I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Input capacitance
C
ibo
154
250
pF
V
EB
= 0.5V, f
= 1MHz
(*)
Output capacitance
C
obo
8.7
15
pF
V
CB
= 10V, f
= 1MHz
(*)
Delay time
t
d
16.4
ns
I
C
= 500mA, V
CC
= 10V,
I
B1
= -I
B2
= 50mA
Rise time
t
r
115
ns
Storage time
t
s
763
ns
Fall time
t
f
158
ns