Electrical characteristics, Zx5t951g, A product line of diodes incorporated – Diodes ZX5T951G User Manual
Page 4
ZX5T951G
Datasheet Number: DS33424 Rev. 3 - 2
4 of 7
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T951G
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-100 -120 -
V I
C
= -100µA
Collector-Emitter Breakdown Voltage
BV
CER
-100 -120 -
V I
C
= -1µA, RB ≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
-60 -80 -
V I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.1 -
V I
E
= -100µA
Collector-Base Cutoff Current
I
CBO
-
<1
-
-20
-0.5
nA
µA
V
CB
= -80V
V
CB
= -80V, T
A
= +100°C
Collector-Emitter Cutoff Current
I
CER
R ≤ 1kΩ
-
<1
-
-20
-0.5
nA
µA
V
CB
= -80V
V
CB
= -80V, T
A
= +100°C
Emitter Cutoff Current
I
EBO
- <1 -10 nA
V
EB
= -6V
Static Forward Current Transfer Ratio (Note 9)
h
FE
100 250 -
-
I
C
= -10mA, V
CE
= -1V
100 200 300
I
C
= -2A, V
CE
= -1V
45 90 -
I
C
= -5A, V
CE
= -1V
10 25 -
I
C
= -10A, V
CE
= -1V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
- -15
-25
mV
I
C
= -100mA, I
B
= -10mA
- -55
-70
I
C
= -1A, I
B
= -100mA
- -90
-120
I
C
= -2A, I
B
= -200mA
- -195
-250
I
C
= -5A, I
B
= -500mA
Base-Emitter Saturation Voltage (Note 9)
V
BE(sat)
- -1030
-1150 mV
I
C
= -5A, I
B
= -500mV
Base-Emitter Turn-On Voltage (Note 9)
V
BE(on)
- -920
-1020 mV
I
C
= -5A, V
CE
= -1V
Output Capacitance (Note 9)
C
obo
- 48 - pF
V
CB
= -10V. f = 1MHz
Transition Frequency
f
T
- 120 - MHz
V
CE
= -10V, I
C
= -100mA
f = 50MHz
Switching Time
t
on
- 39 -
ns
V
CC
= -10V, I
C
= -1A
I
B1
= -I
B2
= -100mA
t
off
- 370 -
Notes:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%