Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN19060CFF User Manual
Page 4
ZXTN19060CFF
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max. Unit Conditions
Collector-base breakdown voltage BV
CBO
160
200
V
IC = 100
A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
160
200
V
I
C
= 100
A, R
BE
Յ 1k⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
60
75
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ300s; duty cycle Յ2%.
Emitter-base breakdown voltage BV
EBO
7
8.3
V
I
E
= 100
A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
6
7
V
I
E
= 100mA, R
BC
Յ1k⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
6
7
V
I
E
= 100
A,
Collector-base cut-off current
I
CBO
<1
50
nA
V
CB
= 160V
0.5
A V
CB
= 160V, T
amb
= 100°C
Collector-emitter cut-off current
I
CEX
<1
100
nA
V
CE
= 120V, R
BE
Յ1k⍀ or
-1V < V
BE
< 0.25V
Emitter-base cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
36
45
mV
I
C
= 1A, I
B
= 100mA
105
150
mV
I
C
= 1A, I
B
= 10mA
105
135
mV
I
C
= 2A, I
B
= 40mA
145
175
mV
I
C
= 5.5A, I
B
= 550mA
Base-emitter saturation voltage
V
BE(sat)
1000 1100
mV
I
C
= 5.5A, I
B
= 550mA
Base-emitter turn-on voltage
V
BE(on)
880
1000
mV
I
C
= 5.5A, V
CE
= 2V
Static forward current transfer
ratio
h
FE
200
350
500
I
C
= 0.1A, V
CE
= 2V
160
280
I
C
= 2A, V
CE
= 2V
30
50
I
C
= 6A, V
CE
= 2V
Transition frequency
f
T
130
MHz I
C
= 50mA, V
CE
= 10V
f
= 50MHz
Input capacitance
C
ibo
310
pF
V
EB
= 0.5V, f
= 1MHz
Output capacitance
C
obo
19.3
25
pF
V
CB
= 10V, f
= 1MHz
Delay time
t
d
27.3
ns
V
CC
= 10V.
I
C
= 500mA,
I
B1
= I
B2
= 50mA.
Rise time
t
r
13.2
ns
Storage time
t
s
682
ns
Fall time
t
f
90.9
ns