Zx5t851a – Diodes ZX5T851A User Manual
Page 2
ZX5T851A
S E M I C O N D U C T O R S
ISSUE 1 - NOVEMBER 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
⍜JA
125
°C/W
Junction to ambient
(b)
R
⍜JA
175
°C/W
NOTES
(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Collector lead length to solder point 4mm.
(b For a device mounted in a socket in still air conditions. Collector lead length 10mm.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
150
V
Collector-emitter voltage
BV
CEO
60
V
Emitter-base voltage
BV
EBO
7
V
Continuous collector current
(a)
I
C
4.5
A
Peak pulse current
I
CM
15
A
Practical power dissipation
(a)
Linear derating factor
P
D
1.0
8
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
0.71
5.7
W
mW/°C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS