Diodes ZTX455 User Manual

Npn silicon planar medium power transistors, Typical characteristics, Absolute maximum ratings

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NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS

ISSUE 2 – MARCH 1994
FEATURES
* 140 Volt V

CEO

* 1 Amp continuous current
* P

tot

= 1 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

ZTX454

ZTX455

UNIT

Collector-Base Voltage

V

CBO

140

160

V

Collector-Emitter Voltage

V

CEO

120

140

V

Emitter-Base Voltage

V

EBO

5

V

Peak Pulse Current

I

CM

2

A

Continuous Collector Current

I

C

1

A

Power Dissipation at T

amb

=25°C

P

tot

1

W

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL

ZTX454

ZTX455

UNIT CONDITIONS.

MIN.

MAX. MIN.

MAX.

Collector-Base

Breakdown Voltage

V

(BR)CBO

140

160

V

I

C

=100

µ

A

Collector-Emitter

Sustaining Voltage

V

CEO(sus)

120

140

V

I

C

=10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

5

5

V

I

E

=100

µ

A

Collector Cut-Off

Current

I

CBO

0.1

0.1

µ

A

µ

A

V

CB

=140V

V

CB

=120V

Emitter Cut-Off

Current

I

EBO

0.1

0.1

µ

A

V

EB

=4V

Collector-Emitter

Saturation Voltage

V

CE(sat)

0.7

1.0

0.7

V

I

C

=150mA, I

B

=15mA

I

C

=200mA, I

B

=20mA

Static Forward

Current Transfer

Ratio

h

FE

100

30

10†

300

100

10†

300

I

C

=150mA, V

CE

=10V*

I

C

=200mA, V

CE

=1V*

I

C

=1A, V

CE

=10V*

Transition

Frequency

f

T

100

100

MHz

I

C

=50mA, V

CE

=10V

f=100MHz

Output Capacitance

C

obo

15

15

pF

V

CB

=10V, f=1MHz

* Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

2%

† Typical

E-Line

TO92 Compatible

ZTX454

ZTX455

3-179

C

B

E

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

I

C

-

Collector Current (Amps)

V

C

E

(s

a

t)

- (

V

o

lts

)

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

h

FE

v I

C

V

BE(sat)

v I

C

I

C

-

Collector Current (Amps)

V

BE(on)

v I

C

h

FE

- N

o

rma

lise

d

Gain (%

)

V

BE

(s

a

t)

- (V

olts)

V

BE

-

(V

olts)

I

C

- Collector Current (Amps)

V

CE

-

Collector Voltage (Volts)

Safe Operating Area

100

1

10

0.001

0.01

0.1

1

Single Pulse Test at T

amb

=25°C

D.C.
1s
100ms
10ms

1.0ms
100µs

0.001

0.01

10

0.1

1

20

40

60

80

100

0.2

0.001

0.1

1

0.4

0.6

1.0

0

0.001

0.01

1

0.1

0.1

0.2

0.3

0.4

V

CE

=10V

I

C

/I

B

=10

I

C

/I

B

=10

Typical Switching Speeds

I

C

-

Collector Current (Amps)

Switching tim

e

0.1

1

0.01

tf

100

0

td
nS

50

0.01

0.0001

0.001

1

0.01

0.1

0.6

0.8

1.0

1.2

V

CE

=10V

0.4

0.8

ZTX454

ZTX455

tf
ns

900

tr
ns

300

200

100

400

500

0

600

500

400

700

800

300

ts
µS

1000

ts

td

tr

0

3

2

1

6

5

4

7

I

B1

=I

B2

=I

C

/10

V

CE

=10V

ZTX454

ZTX455

3-180

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