Diodes ZTX558 User Manual
Ztx558, Typical characteristics, Absolute maximum ratings
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 400 Volt V
CEO
* 200mA continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-200
mA
Power Dissipation
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-400
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
BR(CEO)
-400
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
µ
A
Collector Cut-Off Current I
CBO
-100
nA
V
CB
=-320V
Collector Cut-Off Current I
CES
-100
nA
V
CE
=-320V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.2
-0.5
V
V
I
C
=-20mA, I
B
=-2mA
I
C
=-50mA, I
B
=-6mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-50mA, I
B
=-5mA
Base-Emitter
Turn On Voltage
V
BE(on)
-0.9
V
IC=-50mA, V
CE
=-10V
Static Forward Current
Transfer Ratio
h
FE
100
100
15
300
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V
I
C
=-100mA, V
CE
=-10V*
Transition
Frequency
f
T
50
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=-20V, f=1MHz
Switching times
t
on
t
off
95
1600
ns
ns
I
C
=-50mA, V
C
=-100V
I
B1
=5mA, I
B2
=-10mA
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-202
ZTX558
C
B
E
E-Line
TO92 Compatible
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
at)
- (
V
olts)
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
C
E
(s
a
t)
- (
V
o
lts
)
-55°C
+25°C
+100°C
+175°C
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
- N
o
rma
lis
e
d
Gain
V
B
E
(s
at)
- (
V
olts)
V
B
E
- (
V
o
lts
)
I
C
- Collector Current (Amps)
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
h
FE
- T
ypical Gain
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
100
1
10
0.001
0.01
0.1
1.0
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.001
0.001
0.001
I
C
/I
B
=20
-55°C
+25°C
+100°C
+175°C
1000
ZTX558
3-203