Diodes ZTX560 - Manual

1 S E M I C O N D U C T O R S
ZTX560
ISSUE 2 - SEPTEMBER 2006
E-LINE PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
FEATURES
•
Excellent h
FE
characterisristics up to I
C
=50mA
•
Low Saturation voltages
PARTMARKING
ZTX
560
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Collector-base voltage V
CBO
-500 V
Collector-emitter voltage V
CEO
-500 V
Emitter-base voltage V
EBO
-5 V
Peak pulse current I
CM
-500 mA
Continuous collector current I
C
-150 mA
Power dissipation P
tot
1 W
Operating and storage temperature range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS
Collector-base breakdown boltage V
(BR)CBO
-500 V I
C
=-100 µA
Collector-emitter breakdown voltage V
BR(CEO)
-500 V I
C
=-10mA*
Emitter-base breakdown voltage V
(BR)EBO
-5 V I
E
=-100 µA
Collector cut-off current I
CBO
; I
CES
-100 nA V
CB
=-500V; V
CE
=-500V
Emitter cut-off current I
EBO
-100 nA V
EB
=-5V
Collector-emitter saturation voltage V
CE(sat)
-0.2
-0.5 V
V I
C
=-20mA, I
B
=-2mA*
I
C
=-50mA, I
B
=-10mA*
Base-emitter saturation voltage V
BE(sat)
-0.9 V I
C
=-50mA, I
B
=-10mA*
Base-emitter turn on voltage V
BE(on)
-0.9 V I
C
=-50mA, V
CE
=-10V*
Static forward current transfer ratio h
FE
100
80
15 typ 300
300 I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
Transition frequency f
T
60 MHz V
CE
=-20V, I
C
=-10mA,
f=50MHz
Output capacitance C
obo
8 pF V
CB
=-20V, f=1MHz
Switching times t
on
t
off
110 typ.
1.5 typ. ns
␮s
V
CE
=-100V, I
C
=-50mA,
I
B1
=-5mA, I
B2
=10mA
* Measured under pulsed conditions. Pulse width=300 ␮s. Duty cycle Յ2%
E-LINE PIN-OUT