Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN08400BFF User Manual
Page 4
ZXTN08400BFF
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown
voltage
BV
CBO
450
550
V
I
C
= 100
A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
450
550
V
I
C
= 100
A, R
BE
< 1k
⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
400
500
V
I
C
= 10mA
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
6
8.0
V
I
E
= 100
A, R
BC
< 1k
⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
6
8.5
V
I
E
= 100
A,
Emitter-base breakdown
voltage
BV
EBO
7
8.1
V
I
E
= 100
A
Collector-base cut-off current
I
CBO
<1
50
20
nA
A
V
CB
= 360V
V
CB
= 360V, T
amb
= 100°C
Collector-emitter cut-off
current
I
CEX
<1
100
nA
V
CE
= 360V, R
BE
< 1k
⍀ or
-1V < V
BE
< 0.25V
Emitter-base cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
70
85
mV
I
C
= 20mA, I
B
= 1mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ300s; duty cycle Յ2%.
50
70
mV
I
C
= 50mA, I
B
= 5mA
120
170
mV
I
C
= 300mA, I
B
= 30mA
125
175
mV
I
C
= 500mA, I
B
= 100mA
Base-emitter saturation voltage V
BE(sat)
865
950
mV
I
C
= 500mA, I
B
= 100mA
Base-emitter turn-on voltage
V
BE(on)
800
900
mV
I
C
= 500mA, V
CE
= 10V
Static forward current transfer
ratio
h
FE
90
165
I
C
= 1mA, V
CE
= 5V
100
180
300
I
C
= 50mA, V
CE
= 5V
10
20
I
C
= 500mA, V
CE
= 10V
Transition frequency
f
T
40
MHz I
C
= 10mA, V
CE
= 20V
f
= 20MHz
Output capacitance
C
OBO
8
10
pF
V
CB
= 20V, f
= 1MHz
Delay time
t
d
100
ns
V
CC
= 100V.
I
C
= 100mA,
I
B1
= 10mA, I
B2
= 20mA.
Rise time
t
r
52
ns
Storage time
t
s
3122
ns
Fall time
t
f
240
ns