Diodes ZXTN5551FL - Manual (Page 2)

ZXTN5551FL
Issue 1 - August 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
180 V
Collector-emitter voltage V
CEO
160 V
Emitter-base voltage V
EBO
6 V
Continuous collector current (a) I
C
600 mA
Power dissipation at T
amb
=25°C (a) P
D
330 mW
Linear derating factor 2.64 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient (a) R ⍜JA 379 °C/W