Diodes ZXGD3001E6 - Manual (Page 3)

ZXGD3001E6
Issue 1 - October 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For device with two active dice running at equal power.
(c) Pulse width <=300
␮s limit repetition rate to comply with maximum junction temperature.
Parameter Symbol Limit Unit
Supply voltage V
CC
12 V
Input voltage V
IN
12 V
Peak sink current (c) I
(sink)PK
9 A
Source current @ I
IN1
+ I
IN2
=10mA (a) I
(source)
4.2 A
Sink current @ I
IN1
+ I
IN2
=10mA (a) I
(sink)
2.2 A
Input current (c) I
IN1
, I
IN2
1 A
Power dissipation at T
A
=25
°C (a)(b)
Linear derating factor
P
D
1.1
8.8
W
mW/
°C
Operating and storage temperature range T
j
, T
stg
-55 to +150
°C
Parameter Symbol Value Unit
Junction to ambient (a)(b) R ␪JA 113
°C/W