Switching time test circuits timing diagram – Diodes ZXGD3004E6 User Manual
Page 4
ZXGD3004E6
© Zetex Semiconductors plc 2007
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Switching time test circuits
Timing diagram
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Output voltage, high
V
OH
V
IN1
– 0.4
V
I
source
= 1
A
Output voltage, low
V
OL
V
IN1
+ 0.4
V
I
sink
= 1
A
Source output leakage
current
I
L(source)
1
A
V
CC
= 40V,
V
IN1
=
V
IN2
= 0V
Sink output leakage
current
I
L(sink)
1
A
V
CC
= 40V,
V
IN1
=
V
IN2
= V
CC
Quiescent current
I
Q
50
nA
V
CC
= 32V,
V
IN1
=
V
IN2
= 0V
Source output current I
(source)
1.2
1.9
A
I
IN1
+I
IN2
= 10mA
Sink output current
I
(sink)
1.2
1.9
A
I
IN1
+I
IN2
= 10mA
Source output current I
(source)PK
8
A
I
IN1
+I
IN2
= 1A
Sink output current
I
(sink)PK
8
A
I
IN1
+I
IN2
= 1A
Gate driver
switching times
t
d(rise)
t
r
t
d(fall)
t
f
1.1
13.4
0.95
12.4
ns
ns
ns
ns
C
L
=1.5nF, R
L
=0.1
⍀,
V
CC
=15V, V
IN
=12.5V,
R
S
=25
⍀
Gate driver
switching times
t
d(rise)
t
r
t
d(fall)
t
f
3.2
77.9
3.6
82
ns
ns
ns
ns
C
L
=1.5nF, R
L
=0.1
⍀,
V
CC
=15V, V
IN
=12.5V,
R
S
=1k
⍀