Zhb6718, Pnp transistors electrical characteristics (at t, 25°c ) – Diodes ZHB6718 User Manual
Page 4
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C ).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-20
-65
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-20
-55
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
-8.8
V
I
E
=-100
µ
A
Collector Cut-Off Current I
CBO
-100
nA
V
CB
=-15V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector Emitter Cut-Off
Current
I
CES
-100
nA
V
CES
=-15V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-16
-130
-190
-40
-200
-260
mV
mV
mV
I
C
=-100mA, I
B
=-10mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-2.5A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.98
-1.1
V
I
C
=-2.5A, I
B
=-200mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.85
V
I
+
=-2.5A, V
CE
=-2V*
Static Forward Current
Transfer
Ratio
h
FE
300
300
150
35
475
450
230
70
30
I
C
=-10mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-4A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Transition
Frequency
f
T
150
180
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
(on)
40
ns
V
CC
=-10V, I
C
=-1A
I
B1
=I
B2
=-20mA
Turn-Off Time
t
(off)
670
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%.
ZHB6718