Zhb6790, Npn transistors electrical characteristics (at t, 25°c) – Diodes ZHB6790 User Manual
Page 4
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
50
V
I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
40
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=100
µ
A
Collector Cutoff Current
I
CBO
0.1
µ
A
V
CB
=35V
Emitter Cutoff Current
I
EBO
0.1
µ
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.1
0.16
0.5
0.35
V
V
V
V
I
C
=100mA, I
B
=0.5mA*
I
C
=500mA, I
B
=2.5mA*
I
C
=1A, I
B
=5mA*
I
C
=2A, I
B
=30mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.73
V
I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
500
400
150
I
C
=100mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
16
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
33
1300
ns
I
C
=500mA, I
B!
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%.
ZHB6790