Diodes ZXGD3104N8 - Manual (Page 5)

ZXGD3104N8
Document Number DS35546 Rev. 1 – 2
5 of 13
www.diodes.com
November 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXGD3104N8
Electrical Characteristics
@T A = 25°C unless otherwise specified
V
CC
= 19V; R
BIAS
= 6.3k Ω; R
REF
= 8.5k Ω
Characteristic Symbol Min Typ Max Unit Test Condition
Input and Supply
Quiescent current
I
Q
- 5.16 - mA V
D
≥ 0V
Gate Driver
Turn-off Threshold Voltage (Note 9 & 10)
V
T
-16 -10 0 mV V
G
= 1V
Gate output voltage
(Note 9 & 10) V
G(off)
0 0.73 1.0
V
V
D
≥ 1V
(Note 9 & 11) V
G
12.5 14 V
CC
V
D
= -50mV
17 18 V
CC
V
D
= -100mV
Switching Performance for Q
G
(tot) = 124nC (Note 12)
Turn-on propagation delay t d(rise)
175 250 325
ns
-
Refer to switching
waveforms in Fig. 1 Turn-off propagation delay t
d(fall)
11 15 20
Gate rise time t
r
335 480 625 From 10% of V
G
to 10V
530 760 990 From 10% to 90% of V
G
Gate fall time t
f
35 50 65 Continuous Conduction Mode
Notes: 9.GATEH connected to GATEL
10.R
H
= 100k Ω, R
L
= O/C
11.R
L
= 100k Ω, R
H
= O/C
12. refer to test circuit below