Diodes UMC4N - Manual (Page 2)

UMC4N
Document number: DS31203 Rev. 5 - 2
2 of 6
www.diodes.com
January 2013
© Diodes Incorporated
UMC4N
Maximum Ratings, Pre-Biased NPN Transistor, Q
1 (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Supply Voltage V
CC
50 V
Input Voltage V
IN
-10 to +40 V
Output Current I
O
30 mA
Collector Current I
C
100 mA
Maximum Ratings, Pre-Biased PNP Transistor, Q
2 (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Supply Voltage V
CC
-50 V
Input Voltage V
IN
-40 to +6 V
Output Current I
O
-100 mA
Collector Current I
C
-100 mA
Thermal Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) P
D
150 mW
Thermal Resistance, Junction to Ambient Air (Note 6) R
θJA
833 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
Electrical Characteristics, Pre-Biased NPN Transistor, Q
1 (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
(Note 7) V
I(OFF)
0.5 ⎯ ⎯ V V
CC
= 5V, I
O
= 100 μA
(Note 8) V
I(ON)
⎯ ⎯ 3 V V
O
= 0.3V, I
O
= 2mA
Output Voltage V
O(ON)
⎯ 0.1 0.3 V I
O
/ I
I
= 10mA/0.5 mA
Input Current I
I
⎯ ⎯ 0.18 mA V
I
= 5V
Output Current I
O(OFF)
⎯ ⎯ 0.5 μA V
CC
= 50V, V
I
= 0V
DC Current Gain G
I
68 ⎯ ⎯ ⎯ V
O
= 5V, I
O
= 5mA
Gain-Bandwidth Product (Note 9) f
T
⎯ 250 ⎯ MHz V
CE
= 10V, I
E
= -5mA, f = 100MHz
Input Resistance R
1
32.9 47 61.1 k Ω ⎯
Resistance Ratio R
2
/R
1
0.8 1 1.2 ⎯ ⎯
Note: 7. The device is guaranteed to be in “OFF” state with V
I(OFF)
up to 0.5V
8. The device is guaranteed to be in “ON” state with V
I(ON)
starting from 3V
9. Characteristic of Transistor – for reference only.
Electrical Characteristics, Pre-Biased PNP Transistor, Q
2 (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
(Note 10) V
I(OFF)
-0.3 ⎯ ⎯ V V
CC
= -5V, I
O
= -100 μA
(Note 11) V
I(ON)
⎯ ⎯ -1.4 V V
O
= -0.3V, I
O
= -1mA
Output Voltage V
O(ON)
⎯ -0.1 -0.3 V I
O
/ I
I
= -5mA/-0.25 mA
Input Current I
I
⎯ ⎯ -0.88 mA V
I
= -5V
Output Current I
O(OFF)
⎯ ⎯ -0.5 μA V
CC
= -50V, V
I
= 0V
DC Current Gain G
I
68 ⎯ ⎯ ⎯ V
O
= -5V, I
O
= -5mA
Gain-Bandwidth Product (Note 12) f
T
⎯ 250 ⎯ MHz V
CE
= -10V, I
E
= 5mA, f = 100MHz
Input Resistance R
1
7 10 13 k Ω ⎯
Resistance Ratio R
2
/R
1
3.7 4.7 5.7 ⎯ ⎯
Note: 10. The device is guaranteed to be in “OFF” state with V
I(OFF)
up to -0.3V
11. The device is guaranteed to be in “ON” state with V
I(ON)
starting from -1.4V
12. Characteristic of Transistor – for reference only.