Diodes ZTX605 User Manual

Diodes Hardware

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NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS

ISSUE 1 – MARCH 94
FEATURES
* 120 Volt V

CEO

* 1 Amp continuous current
* Gain of 2K at I

C

=1 Amp

* P

tot

= 1 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

ZTX604

ZTX605

UNIT

Collector-Base Voltage

V

CBO

120

140

V

Collector-Emitter Voltage

V

CEO

100

120

V

Emitter-Base Voltage

V

EBO

10

V

Peak Pulse Current

I

CM

4

A

Continuous Collector Current

I

C

1

A

Power Dissipation at T

amb

=25°C

derate above 25°C

P

tot

1

5.7

W

mW/ °C

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

ZTX604

ZTX605

UNIT

CONDITIONS.

MIN.

MAX. MIN.

MAX.

Collector-Base

Breakdown Voltage

V

(BR)CBO

120

140

V

I

C

=100

µ

A

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

100

120

V

I

C

=10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

10

10

V

I

E

=100

µ

A

Collector Cut-Off

Current

I

CBO

0.01

10

0.01

10

µ

A

µ

A

µ

A

µ

A

V

CB

=100V

V

CB

=120V

V

CB

=100V,

T

amb

=100°C

V

CB

=120V,

T

amb

=100°C

Emitter Cut-Off

Current

I

EBO

0.1

0.1

µ

A

V

EB

=8V

Colllector-Emitter

Cut-Off Current

I

CES

10

10

µ

A

V

CES

=100V

V

CES

=120V

Collector-Emitter

Saturation Voltage

V

CE(sat)

1.0

1.5

1.0

1.5

V

V

I

C

=250mA, I

B

=0.25mA*

I

C

=1A, I

B

=1mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

1.8

1.8

V

I

C

=1A, I

B

=1mA*

Base-Emitter

Turn-On Voltage

V

BE(on)

1.7

1.7

V

IC=1A, V

CE

=5V*

ZTX604

ZTX605

3-212

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

ZTX604

ZTX605

UNIT CONDITIONS.

MIN.

MAX. MIN.

MAX.

Static Forward

Current Transfer Ratio

h

FE

2K

5K

2K

0.5K

100K

2K

5K

2K

0.5K

100K

I

C

=50mA, V

CE

=5V

I

C

=500mA, V

CE

=5V*

I

C

=1A, V

CE

=5V*

I

C

=2A, V

CE

=5V*

Transition Frequency

f

T

150

150

MHz

I

C

=100mA, V

CE

=10V

f=20MHz

Input Capacitance

C

ibo

90 Typical

pF

V

EB

=500mV, f=1MHz

Output Capacitance

C

obo

15 Typical

pF

V

CB

=10V, f=1MHz

Switching Times

t

on

0.5 Typical

µ

s

I

C

=500mA, V

CE

=10V

I

B1

=I

B2

=0.5mA

t

off

1.6 Typical

µ

s

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

2%

The maximum permissible operational temperature can be obtained from this graph using the

following equation

T

amb

(

max

)

=

Power

(

max

)

Power

(

act

)

0.0057

+

25°C

T

amb(max )

= Maximum operating ambient temperature

Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V

CE

and source resistance (R

S

)

Power(actual)= Actual power dissipation in users circuit

C

B

E

E-Line

TO92 Compatible

ZTX604

ZTX605

Voltage Derating Graph

V

CE

- Collector-Emitter Voltage (Volts)

1.0

0.8

0.6

0.4

0

0.2

1

10

100

DC Conditions

R

5

= 100K

R

5

=

Max

im

um

Power

Di

ss

ip

at

io

n

(W

)

200

R

5

= 1M

R

5

= 20K

ZTX605

ZTX604

3-213

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