Diodes ZXTNS618MC - Manual (Page 2)

ZXTNS618MC
Document Number DS31933 Rev. 4 - 2
2 of 10
www.diodes.com
June 2011
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A Product Line of
Diodes Incorporated
ZXTNS618MC
NPN - Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Parameter Symbol Limit Unit
Collector-Base Voltage V
CBO
40
V Collector-Emitter Voltage V CEO
20
Emitter-Base Voltage V
EBO
7
Peak Pulse Current I
CM
12
A Continuous Collector Current
(Notes 4 and 7)
I
C
4.5
(Notes 5 and 7) 5
Base Current I B
1
NPN - Thermal Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Notes 4 & 7)
P
D
1.5
12
W
mW/ °C
(Notes 5 & 7)
2.45
19.6
(Notes 6 & 7)
1.13
8
(Notes 6 & 8)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 4 & 7)
R θJA
83.3
°C/W
(Notes 5 & 7) 51.0
(Notes 6 & 7) 111
(Notes 6 & 8) 73.5
Thermal Resistance, Junction to Lead (Note 9) R θJL 17.1
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm 2 ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device
is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector and cathode pads connected to each half.
5. Same as note (4), except the device is measured at t <5 sec.
6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm
2 ) FR4 PCB with high coverage of single sided 1oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).