Zxm61n02f, Electrical characteristics, At t – Diodes ZXM61N02F User Manual
Page 4: 25°c unless otherwise stated)
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.(3) MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
20
V
I
D
=250
µ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
µ
A
V
DS
=20V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
G S
=
±
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
G S(th)
0.7
V
I
D
=250
µ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.18
0.24
Ω
Ω
V
G S
=4.5V, I
D
=0.93A
V
G S
=2.7V, I
D
=0.47A
Forward Transconductance (3)
g
fs
1.3
S
V
DS
=10V,I
D
=0.47A
DYNAMIC (3)
Input Capacitance
C
iss
160
pF
V
DS
=15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
50
pF
Reverse Transfer Capacitance
C
rss
30
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
2.4
ns
V
DD
=10V, I
D
=0.93A
R
G
=6.2
Ω
, R
D
=11
Ω
(refer to test
circuit)
Rise Time
t
r
4.2
ns
Turn-Off Delay Time
t
d(off)
7.8
ns
Fall Time
t
f
4.2
ns
Total Gate Charge
Q
g
3.4
nC
V
DS
=16V,V
GS
=4.5V,
I
D
=0.93A
(refer to test
circuit)
Gate-Source
Charge Q
gs
0.41
nC
Gate-Drain Charge
Q
gd
0.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
J
=25°C, I
S
=0.93A,
V
G S
=0V
Reverse Recovery Time (3)
t
rr
12.9
ns
T
J
=25°C, I
F
=0.93A,
di/dt= 100A/
µ
s
Reverse Recovery Charge (3)
Q
rr
5.2
nC
NOTES
(1) Measured under pulsed conditions. Width
≤
300
µ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
4
ZXM61N02F
ISSUE
1 - JUNE 2004