Diodes ZXMN2A01E6 - Manual (Page 4)

ZXMN2A01E6
ISSUE 3 - FEBRUARY 2006
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 20 V ID=250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS 1 µA VDS=20V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=Ϯ12V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 0.7 V I
D
=250 µA, VDS= VGS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.12
0.225
Ω
Ω
VGS=4.5V, ID=4A
VGS=2.5V, ID=1.5A
Forward Transconductance (1)(3) gfs 6.1 S VDS=10V,ID=4A
DYNAMIC (3)
Input Capacitance Ciss 303 pF
VDS=15 V, VGS=0V,
f=1MHz Output Capacitance Coss 59 pF
Reverse Transfer Capacitance Crss 30 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 2.49 ns
VDD =10V, ID=4A
RG=6.0Ω, VGS=5V
Rise Time tr 5.21 ns
Turn-Off Delay Time td(off) 7.47 ns
Fall Time tf 4.62 ns
Total Gate Charge Qg 3.0 nC
VDS=10V,VGS=4.5V,
I
D
=4A Gate-Source Charge Qgs 0.8 nC
Gate-Drain Charge Qgd 1.0 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.9 0.95 V TJ=25°C, IS=3.2A,
VGS=0V
Reverse Recovery Time (3) trr 23 ns TJ=25°C, IF= 4A,
di/dt= 100A/ µs
Reverse Recovery Charge (3) Qrr 5.65 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Width =300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.