Diodes ZXMN2A03E6 - Manual (Page 2)

ZXMN2A03E6
ISSUE 4 - SEPTEMBER 2005
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 113 °C/W
Junction to Ambient (b) RθJA 70 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t р5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 ␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph. Refer to transient thermal impedance graph.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 20 V
Gate Source Voltage VGS 12 V
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
ID 4.6
3.7
3.7 A
Pulsed Drain Current (c) IDM 16 A
Continuous Source Current (Body Diode) (b) IS 2.7 A
Pulsed Source Current (Body Diode) (c) ISM 16 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD 1.1
8.8 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD 1.7
13.6
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS.