Diodes ZXMN2B01F - Manual (Page 2)

ZXMN2B01F
Issue 2 - March 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 ␮s - pulse width limited by maximum junction
temperature.
Parameter Symbol Limit Unit
Drain-source voltage V
DSS
20 V
Gate-source voltage V
GS
±8 V
Continuous drain current @ V
GS
= 4.5V; T
amb
=25°C (b) I
D
2.4 A
@ V
GS
= 4.5V; T
amb
=70°C (b) 1.9 A
@ V
GS
= 4.5V; T
amb
=25°C (a) 2.1 A
Pulsed drain current (c) I
DM
11.8 A
Continuous source current (body diode) (b) I
S
1.4 A
Pulsed source current (body diode) (c) I
SM
11.8 A
Power dissipation at T
amb
=25°C (a) P
D
625 mW
Linear derating factor 5 mW/°C
Power dissipation at T
amb
=25°C (b) P
D
806 mW
Linear derating factor 6.4 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient (a) R
⍜JA
200 °C/W
Junction to ambient (b) R ⍜JA 155 °C/W