Diodes ZXMN2B03E6 - Manual

Issue 1 - September 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXMN2B03E6
20V SOT23-6 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
Description
This new generation trench MOSFET from Zetex features low on-
resistance achievable with low gate drive.
Features
• Low on-resistance
• Fast switching speed
• Low gate drive capability
• SOT23-6 package
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device marking
2B3
V
(BR)DSS
R
DS(on)
( ⍀) I
D
(A)
20
0.040 @ V
GS
= 4.5V 5.4
0.055 @ V
GS
= 2.5V 4.6
0.075 @ V
GS
= 1.8V 4.0
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXMN2B03E6TA 7 8 3,000
D
S
G
D
D
G
Top view
D
D
S