Zxmn2f34fh, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXMN2F34FH User Manual
Page 4
ZXMN2F34FH
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source Breakdown
Voltage
V
(BR)DSS
20
V
I
D
= 250
μA, V
GS
=0V
Zero Gate Voltage Drain
Current
I
DSS
1
μA
V
DS
= 20V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=±12V, V
DS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.5
0.8
1.5
V
I
D
= 250
μA, V
DS
=V
GS
Static Drain-Source
On-State Resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤2%.
R
DS(on)
0.060
0.120
Ω
Ω
V
GS
= 4.5V, I
D
= 2.5A
V
GS
= 2.5V, I
D
= 1.0A
Forward
Transconductance
g
fs
7.5
S
V
DS
= 10V, I
D
= 2.5A
Dynamic
(†)
(†) For design aid only, not subject to production testing.
Input Capacitance
C
iss
277
pF
V
DS
= 10V, V
GS
=0V
f=1MHz
Output Capacitance
C
oss
65
pF
Reverse Transfer
Capacitance
C
rss
35
pF
Switching
(‡) Switching characteristics are independent of operating junction temperature.
Turn-On-Delay Time
t
d(on)
2.65
ns
V
DD
= 10V, V
GS
= 4.5V
I
D
= 1A
R
G
≈
6.0
Ω
Rise Time
t
r
4.2
ns
Turn-Off Delay Time
t
d(off)
9.9
ns
Fall Time
t
f
5.1
ns
Total Gate Charge
Q
g
2.8
nC
V
DS
= 10V, V
GS
= 4.5V
I
D
= 2.5A
Gate-Source Charge
Q
gs
0.61
nC
Gate Drain Charge
Q
gd
0.63
nC
Source-drain diode
Diode Forward Voltage
V
SD
0.73
1.2
V
I
S
= 1.25A, V
GS
=0V
Reverse recovery time
t
rr
6.5
ns
T
j
=25
o
C, I
F
=1.65A
di/dt=100A/
s
Reverse recovery charge
Q
rr
1.4
nC