Diodes ZXMN3A01E6 - Manual (Page 4)

ZXMN3A01E6
ISSUE 2 - JULY 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 30 V ID=250
µ
A, VGS=0V
Zero Gate Voltage Drain Current IDSS 0.5 µ
A VDS=30V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=Ϯ20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 1 V I
D
=250
µ
A, VDS= VGS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.106 0.12
0.18
Ω
Ω
VGS=10V, ID=2.5A
VGS=4.5V, ID=2.0A
Forward Transconductance (1)(3) gfs 3.5 S VDS=4.5V,ID=2.5A
DYNAMIC (3)
Input Capacitance Ciss 190 pF
VDS=25 V, VGS=0V,
f=1MHz Output Capacitance Coss 38 pF
Reverse Transfer Capacitance Crss 20 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 1.7 ns
VDD =15V, ID=2.5A
RG=6.0 Ω , VGS=10V
Rise Time tr 2.3 ns
Turn-Off Delay Time td(off) 6.6. ns
Fall Time tf 2.9 ns
Gate Charge Qg 2.3 nC VDS=15V,VGS=5V,
I
D
=2.5A
Total Gate Charge Qg 3.9 nC
VDS=15V,VGS=10V,
I
D
=2.5A Gate-Source Charge Qgs 0.6 nC
Gate-Drain Charge Qgd 0.9 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.84 0.95 V TJ=25°C, IS=1.7A,
VGS=0V
Reverse Recovery Time (3) trr 17.7 ns TJ=25°C, IF=2.5A,
di/dt= 100A/ µ s
Reverse Recovery Charge (3) Qrr 13.0 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width = 300 µ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.