Diodes ZXMN3A02X8 - Manual (Page 4)

ZXMN3A02X8
ISSUE 1 - JANUARY 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 30 V ID=250 µ A, VGS=0V
Zero Gate Voltage Drain Current IDSS 1 µ A VDS=30V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=Ϯ20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 1 V I
D
=250
µ
A, VDS= VGS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.025
0.035 Ω
Ω
VGS=10V, ID=12A
VGS=4.5V, ID=10.2A
Forward Transconductance (1)(3) gfs 22 S VDS=10V,ID=12A
DYNAMIC (3)
Input Capacitance Ciss 1400 pF
VDS=25 V, VGS=0V,
f=1MHz Output Capacitance Coss 209 pF
Reverse Transfer Capacitance Crss 120 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 3.9 ns
VDD =15V, ID=5.5A
RG=6.2 Ω , VGS=10V
(refer to test circuit)
Rise Time tr 5.5 ns
Turn-Off Delay Time td(off) 35.0 ns
Fall Time tf 7.6 ns
Gate Charge Qg 14.5 nC VDS=15V,VGS=5V,
ID=5.5A
(refer to test circuit)
Total Gate Charge Qg 26.8 nC
VDS=15V,VGS=10V,
ID=5.5A
(refer to test circuit)
Gate-Source Charge Qgs 4.7 nC
Gate-Drain Charge Qgd 4.7 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.95 V TJ=25°C, IS=9A,
VGS=0V
Reverse Recovery Time (3) trr 17 ns TJ=25°C, IF=5.5A,
di/dt= 100A/ µ s
Reverse Recovery Charge (3) Qrr 8.3 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300
µ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.