Zxmn3a04dn8, At t, 25°c unless otherwise stated) – Diodes ZXMN3A04DN8 User Manual
Page 4
ZXMN3A04DN8
ISSUE 2 - OCTOBER 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
30
V
I
D
=250
µ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
0.5
µ
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
±
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.0
V
I
D
=250
µ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.02
0.03
Ω
Ω
V
GS
=10V, I
D
=12.6A
V
GS
=4.5V, I
D
=10.6A
Forward Transconductance (3)
g
fs
22.1
S
V
DS
=15V,I
D
=12.6A
DYNAMIC (3)
Input Capacitance
C
iss
1890
pF
V
DS
=15V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
349
pF
Reverse Transfer Capacitance
C
rss
218
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
5.2
ns
V
DD
=15V, I
D
=1A
R
G
=6.0
Ω
, V
GS
=10V
Rise Time
t
r
6.1
ns
Turn-Off Delay Time
t
d(off)
38.1
ns
Fall Time
t
f
20.2
ns
Gate Charge
Q
g
19.9
nC
V
DS
=15V,V
GS
=5V,
I
D
=6.5A
Total Gate Charge
Q
g
36.8
nC
V
DS
=15V,V
GS
=10V,
I
D
=6.5A
Gate-Source Charge
Q
gs
5.8
nC
Gate-Drain Charge
Q
gd
7.1
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.85
0.95
V
T
J
=25°C, I
S
=6.8A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
18.4
ns
T
J
=25°C, I
F
=2.3A,
di/dt= 100A/
µ
s
Reverse Recovery Charge (3)
Q
rr
11
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300
µ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.