Diodes ZXMN3A06DN8 - Manual (Page 4)

ZXMN3A06DN8
ISSUE 2 - OCTOBER 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
30 V I
D
=250
µ
A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
0.5 ␮A V
DS
=30V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
= ± 20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
1 V I
D
=250 ␮A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1) R
DS(on)
0.035
0.050 ⍀
⍀
V
GS
=10V, I
D
=9A
V
GS
=4.5V, I
D
=7.4A
Forward Transconductance (1)(3) g
fs
13.5 S V
DS
=15V,I
D
=9A
DYNAMIC (3)
Input Capacitance C
iss
796 pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
Output Capacitance C
oss
137 pF
Reverse Transfer Capacitance C
rss
83.5 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
3.0 ns
V
DD
=15V, I
D
=3.5A
R
G
=6.0 ⍀, V
GS
=10V
Rise Time t
r
6.4 ns
Turn-Off Delay Time t
d(off)
21.6 ns
Fall Time t
f
9.4 ns
Gate Charge Q
g
9.2 nC V
DS
=15V,V
GS
=5V,
I
D
=3.5A
Total Gate Charge Q
g
17.5 nC
V
DS
=15V,V
GS
=10V,
I
D
=3.5A
Gate-Source Charge Q
gs
2.3 nC
Gate-Drain Charge Q
gd
3.1 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
0.85 0.95 V T
J
=25°C, I
S
=5.1A,
V
GS
=0V
Reverse Recovery Time (3) t
rr
17.8 ns T
J
=25°C, I
F
=3.5A,
di/dt= 100A/
µ
s
Reverse Recovery Charge (3) Q
rr
11.6 nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width ≤ 300 µ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.