Zxmn3b14f – Diodes ZXMN3B14F User Manual
Page 4
ZXMN3B14F
S E M I C O N D U C T O R S
ISSUE 2 - JANUARY 2006
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
30
V
I
D
= 250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A V
DS
= 30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
Ϯ12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
0.7
V
I
D
= 250
A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.080
0.140
⍀
⍀
V
GS
= 4.5V, I
D
= 3.1A
V
GS
= 2.5V, I
D
= 2.2A
Forward Transconductance
(1) (3)
g
fs
8.5
S
V
DS
= 15V, I
D
= 3.1A
DYNAMIC
(3)
Input Capacitance
C
iss
568
pF
V
DS
= 15V, V
GS
=0V
f=1MHz
Output Capacitance
C
oss
101
pF
Reverse Transfer Capacitance
C
rss
66
pF
SWITCHING
(2) (3)
Turn-On-Delay Time
t
d(on)
3.6
ns
V
DD
= 15V, V
GS
= 4.5V
I
D
= 1A
R
G
≅ 6.0⍀
Rise Time
t
r
4.9
ns
Turn-Off Delay Time
t
d(off)
17.3
ns
Fall Time
t
f
9.8
ns
Total Gate Charge
Q
g
6.7
nC
V
DS
= 15V, V
GS
= 4.5V
I
D
= 3.1A
Gate-Source Charge
Q
gs
1.4
nC
Gate Drain Charge
Q
gd
1.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.82
0.95
V
T
j
=25°C, I
S
= 3.1A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
10.8
ns
T
j
=25°C, I
F
= 1.6A,
di/dt=100A/
s
Reverse Recovery Charge
(3)
Q
rr
4.54
nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
Յ 300s; duty cycle Յ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.