Diodes ZVN2106A - Manual

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt V
DS
* R
DS(on)
=2 Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
60 V
Continuous Drain Current at T amb =25°C I D 450 mA
Pulsed Drain Current I
DM
8 A
Gate Source Voltage V GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BV
DSS
60 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage V
GS(th)
0.8 2.4 V ID=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current I
DSS
500
100 nA
µ A
V
DS
=60 V, V
GS
=0
V
DS
=48 V, V
GS
=0V,
T=125°C (2)
On-State Drain Current(1) I D(on) 2 A V DS =18V, V GS =10V
Static Drain-Source On-State
Resistance (1) R
DS(on)
2 Ω V
GS
=10V,I
D
=1A
Forward Transconductance
(1)(2) g
fs
300 mS V
DS
=18V,I
D
=1A
Input Capacitance (2) C
iss
75 pF
Common Source Output
Capacitance (2) C
oss
45 pF V
DS
=18 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2) C
rss
20 pF
E-Line
TO92 Compatible
ZVN2106A
3-361
D
G
S
TYPICAL CHARACTERISTICS
V DS - Drain Source Voltage (Volts)
I D(
O
n
)
-On-S
tate
D
rain Curren
t (Amps)
0 1 2 3 4 5
Saturation Characteristics
5V
V GS=
10V
7V
8V
6V
4V
3V
0
0 2 4 6 8 10
1.6
1.2
1.4
1.8
2.0
V
DS-
Drain Source
V
oltage (V
o
lts)
Voltage Saturation Characteristics
V GS- Gate Source Voltage (Volts)
I D=
1A
0.5A
0.25A
9V
On-resistance v gate-source voltage
V GS -Gate Source Voltage (Volts)
R
DS(ON
)
-D
rai
n
S
o
ur
ce
O
n
-Res
is
ta
nc
e
(
Ω )
1 2 3 4 5 6 7 8 9 10 20
I D=
1A
0.5A
0.25A
0.1
1
10
Normalised R DS(on) and V GS(th) vs Temperature
N
ormalis
e
d R
DS(
o n)
a
n
d V
GS(th)
-40 -20 0 20 40 60 80 120 100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urc
e R
es ista
nc
e R
DS(
on )
Gate Threshold Vo
ltage V GS(th)
T j -Junction Temperature (C°)
0.4
-80 -60
0
4
3
1
2
0.6
0.2
0.4
0.8
1.0
Transfer Characteristics
I D(
O
n
) -On-S
tate
D
rain Curren
t (A
m
ps)
V GS- Gate Source Voltage (Volts)
0 1 2 3 4 5 6 7 8 9 10
V DS=
10V
2
0
4
3
1
I D= 1A
V GS= 10V
I D= 1mA
V GS= V DS
Transconductance v drain current
I D - Drain Current (Amps )
g fs
-T
ran
sc
o
nd
ucta
nce (S)
0 1 2 3 4 5
0.7
0.6
0.4
0.1
0
0.2
0.5
0.3
V DS= 10V
ZVN2106A
3-362