Diodes ZVN2106G - Manual

TYPICAL CHARACTERISTICS
V DS - Drain Source Voltage (Volts)
I D
(O
n)
-On-S
tate Drain
Cur
rent (A
m
p
s )
0 1 2 3 4 5
Saturation Characteristics
5V
V GS=
10V
7V
8V
6V
4V
3V
9V
On-resistance v gate-source voltage
V GS -Gate Source Voltage (Volts)
R
DS
(O
N
)
-D
rain S
ourc
e
On-Resi
s
ta
n
c
e
(
Ω
)
1 10 20
I D=
1A
0.5A
0.25A
0.1
1
10
Normalised R DS(on) and V GS(th) v Temperature
Normalise
d R
D S(
on
)
and V
GS(
th
)
-40 -20 0 20 40 60 80 120 100 140 160
Dra
in-S
ource
Re
sist
ance
R DS(
on)
Gate Threshold V
oltage V GS(th)
T j -Junction Temperature (C°)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
0.4
-80 -60
0
4
3
1
2
I D= 1A
V GS= 10V
I D= 1mA
V GS= V DS
Transconductance v drain current
I D - Drain Current (Amps )
g fs
-T
ransconductance (
S
)
0 1 2 3 4 5
0.7
0.6
0.4
0.1
0
0.2
0.5
0.3
V DS= 10V
Q-Charge (nC)
V
GS
-G
ate S
ource V
ol
tage (V
ol
ts
)
Gate charge v gate-source voltage
V DD =
20V 30V 50V
10
8
6
2
0
4
12
14
16
I D= 3A
0 0.5 1.0 1.5 2.0 2.5 3.0
V DS -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capaci
tance (
p
F
)
C oss
C iss
C rss
0 10 20 30 40 50
60
40
20
80
100
ZVN2106G
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – NOVEMBER 1995
FEATURES
* 60 Volt V
DS
* R
DS(on)
=2 Ω
COMPLEMENTARY TYPE - ZVP2106G
PARTMARKING DETAIL - ZVN2106
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
60 V
Continuous Drain Current at T amb =25°C I D 710 mA
Pulsed Drain Current I
DM
8 A
Gate Source Voltage V GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
2.0 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BV
DSS
60 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold Voltage V
GS(th)
0.8 2.4 V I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain Current I
DSS
500
100 nA
µ A
V
DS
=60 V, V
GS
=0
V
DS
=48 V, V
GS
=0V,
T=125°C (2)
On-State Drain Current (1) I
D(on)
2 A V
DS
=18V, V
GS
=10V
Static Drain-Source On-State
Resistance (1) R
DS(on)
2 Ω V
GS
=10V,I
D
=1A
Forward Transconductance (1)(2) g
fs
300 mS V
DS
=18V,I
D
=1A
Input Capacitance (2) C
iss
75 pF
Common Source Output
Capacitance (2) C
oss
45 pF V
DS
=18 V, V
GS
=0V, f=1MHz
ReverseTransfer Capacitance(2) C
rss
20 pF
Turn-On Delay Time (2)(3) t
d(on)
7 ns
V
DD
≈ 18V, I
D
=1A
Rise Time (2)(3) t
r
8 ns
Turn-Off Delay Time (2)(3) t d(off) 12 ns
Fall Time (2)(3) t
f
15 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVN2106G
D
D
S
G
3 - 386 3 - 385