Diodes ZVN4206AV - Manual

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - APRIL 1998
FEATURES
* 60 Volt V
DS
* R
DS(on)
= 1
Ω
* Repetitive avalanche rating
* No transient protection required
* Characterised for 5V logic drive
APPLICATIONS
* Automotive relay drivers
* Stepper motor driver
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
60 V
Continuous Drain Current at T
amb
=25°C I
D
600 mA
Pulsed Drain Current I
DM
8 A
Gate-Source Voltage V
GS
±
20 V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Continuous Body Diode Current at T
amb
=25°C
I
SD
600 mA
Avalanche Current – Repetitive I
AR
600 mA
Avalanche Energy – Repetitive E
AR
15 mJ
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BV
DSS
60 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold Voltage V
GS(th)
1.3 3 V I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
100 nA V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain
Current I
DSS
10
100
µ
A
µ
A
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C (2)
On-State Drain Current(1) I
D(on)
3 A V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1) R
DS(on)
1
1.5
Ω
Ω
V
GS
=10V,I
D
=1.5A
V
GS
=5V,I
D
=.0.5A
Forward Transconductance(1)(2) g
fs
300 mS V
DS
=25V,I
D
=1.5A
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance (2) C
oss
60 pF V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
20 pF
Turn-On Delay Time (2)(3) t
d(on)
8 ns
V
DD
≈
25V, I
D
=1.5A,V
GEN
=10V
Rise Time (2)(3) t
r
12 ns
Turn-Off Delay Time (2)(3) t
d(off)
12 ns
Fall Time (2)(3) t
f
15 ns
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVN4206AV
D
G
S