Diodes ZVN4206G User Manual
Zvn4206g
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
✪
FEATURES
*
Compact geometry
*
Fast switching speeds
*
No secondary breakdown and Excellent temperature stability
*
High input impedance and low current drive
*
Ease of parralleling
APPLICATIONS
*
DC-DC converters
*
Solenoid / relay drivers for automotive applications
*
Stepper motor drivers and Print head drivers
PARTMARKING DETAIL -
ZVN4206
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
60
V
Continuous Drain Current at T
amb
=25°C
I
D
1
A
Pulsed Drain Current
I
DM
8
A
Gate-Source Voltage
V
GS
±
20
V
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ZVN4206G
ZVN4206G
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Drain-Source Breakdown Voltage BV
DSS
60
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.3
3
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain Current
I
DSS
10
100
µ
A
µ
A
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V, T=125°C
(2)
On-State Drain Current (1)
I
D(on)
3
A
V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
1
1.5
Ω
Ω
V
GS
=10V, I
D
=1.5A
V
GS
=5V, I
D
=0.5A
Forward Transconductance (1)(2) g
fs
300
mS
V
DS
=25V,I
D
=1.5A
Input Capacitance (2)
C
iss
100
pF
Common Source Output
Capacitance (2)
C
oss
60
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2)
C
rss
20
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
≈
25V, I
D
=1.5A, V
GEN
=10V
Rise Time (2)(3)
t
r
12
ns
Turn-Off Delay Time (2)(3)
t
d(off)
12
ns
Fall Time (2)(3)
t
f
15
ns
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2%
(2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
D
D
S
G
3 - 402
3 - 401