Diodes ZVN4306G - Manual

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low R
DS(ON)
= .33 Ω
APPLICATIONS
* DC - DC Converters
* Solenoids/Relay Drivers for Automotive
PARTMARKING DETAIL - ZVN4306
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V DS 60 V
Continuous Drain Current at T
amb
=25°C I
D
2.1 A
Pulsed Drain Current I
DM
15 A
Gate Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
3 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BV
DSS
60 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage V
GS(th)
1.3 3 V I D =1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage
Drain Current I
DSS
10
100 µ A
µ A
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V, T=125°C (2)
On-State Drain
Current(1) I
D(on)
12 A V
DS
=10V, V
GS
=10V
Static Drain-Source
On-State Resistance (1) R
DS(on)
0.22
0.32 0.33
0.45 Ω
Ω
V
GS
=10V, I
D
=3A
V
GS
=5V, I
D
=1.5A
Forward
Transconductance (1) g
fs
0.7 S V
DS
=25V,I
D
=3A
Input Capacitance (2) C
iss
350 pF
Common Source
Output Capacitance (2) C
oss
140 pF V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2) C
rss
30 pF
Turn-On Delay Time
(2)(3) t
d(on)
8 ns
V
DD
≈ 25V, V
GEN
=10V, I
D
=3A Rise Time (2)(3) t
r
25 ns
Turn-Off Delay Time
(2)(3) t
d(off)
30 ns
Fall Time (2)(3) t
f
16 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVN4306G
D
D
S
G
3 - 412
ZVN4306G
3 - 411
TYPICAL CHARACTERISTICS
Saturation Characteristics
V DS - Drain Source Voltage (Volts)
0 1 2 3 4 5 6 7 8 9 10
I D
- Dra
in Curr
ent
(Amps)
Normalised R DS(on) and V GS(th) v Temperature
T j -Junction Temperature (°C)
N
o
rm
al
ised
R
D S(
on
)
and
V G
S(t
h)
-50 -25 0 25 50 75 100 150 125 175 200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Dr
ai n-S
our
ce
Res
ist
anc
e R DS(on)
Gate Threshold Voltage V GS(TH)
I D= 3A
V GS= 10V
I D= 1mA
V GS= V DS
2.6
225
0
4
1
2
7
6
5
3
10
9
8
10V 8V 9V
7V
5V
4V
6V
3.5V
V GS=
20V 12V
On-resistance v drain current
I D- Drain Current (Amps)
R
D
S (on
) -Drai
n Source On Resi
stance
(
Ω )
0.1 10 100
3.5V 5V V GS =3V 6V
0.1
10
1.0
1
10V
3V
12
11
V DS -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C
-C
ap
aci
tance
(pF)
C oss
C iss
C rss
0 10 20 30 40 50 60 70 80
0
300
200
100
400
500
Q-Charge (nC)
V
GS
-Gat
e
Source
V
o
lt
age
(V
ol
ts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V DD =
20V
I D= 3A
40V
60V
1 2 3 4 5 6 7 8 9 10 11 12
Transconductance v drain current
I D(on) - Drain Current (Amps )
g fs
-T
ranscon
ductan
c
e (S)
0 2 4 6 8 10
V DS= 10V
0
1
2
4
3
5
12 14 16 18 20
8V