Zvn4106f, Electrical characteristics – Diodes ZVN4106F User Manual
Page 3
ZVN4106F
Document number: DS33360 Rev. 3 - 2
3 of 6
July 2012
© Diodes Incorporated
ZVN4106F
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 — — V
V
GS
= 0V, I
D
= 10mA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
—
—
10
50
µA
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
A
= +125°C
Gate-Source Leakage
I
GSS
—
—
100 nA
V
GS
= ±20V, V
DS
= 0V
On-State Drain Current
I
D(on)
1 —
- A
V
GS
= 10V, V
DS
= 15V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.3 —
3 V
V
DS
= V
GS
, I
D
= 1mA
Static Drain-Source On-Resistance
R
DS (on)
— —
2.5
5
Ω
V
GS
= 10V, I
D
= 500mA
V
GS
= 5V, I
D
= 200mA
Forward Transconductance
g
fs
150 —
- mS
V
DS
= 25V, I
D
= 250mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
—
—
35 pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
—
25 pF
Reverse Transfer Capacitance
C
rss
—
—
8 pF
Turn-On Delay Time
t
D(on)
—
—
5 ns
V
DS
= 25V, I
D
= 150mA
Turn-On Rise Time
t
r
—
—
7 ns
Turn-Off Delay Time
t
D(off)
—
—
6 ns
Turn-Off Fall Time
t
f
—
—
8 ns
Notes:
7. Short duration pulse test used to minimize self-heating effect.