Diodes ZXMN4A06GQ - Manual (Page 2)

ZXMN4A06GQ
Document number: DS36694 Rev. 2 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
ZXMN4A06GQ
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
40 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current V
GS
= 10V
(Note 7)
I
D
7
A T
A
= +70°C (Note 7) 5.6
(Note 6) 5
Pulsed Drain Current V
GS
= 10V (Note 8) I
DM
22 A
Continuous Source Current (Body diode) (Note 7) I
S
5.4 A
Pulsed Source Current (Body diode) (Note 8) I
SM
22 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
2
16 W
mW/°C
(Note 7)
3.9
31
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
62.5
°C/W
(Note 7) 32.2
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
40 ⎯ ⎯ V I
D
= 250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 µA V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1 ⎯ ⎯ V I
D
= 250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9) R
DS(ON)
⎯ ⎯
0.05
Ω
V
GS
= 10V, I
D
= 4.5A
0.075 V
GS
= 4.5V, I
D
= 3.2A
Forward Transconductance (Notes 11) g
fs
⎯ 8.7 ⎯ S V
DS
= 15V, I
D
= 2.5A
Diode Forward Voltage (Note 9) V
SD
⎯ 0.8 0.95 V I
S
= 2.5A, V
GS
= 0V, T
J
= +25°C
Reverse recovery time (Note 11) t
rr
14.5 ⎯ ns I
F
= 2.5A, di/dt = 100A/µs,
T
J
= +25°C Reverse recovery charge (Note 11) Q
rr
⎯ 7.8 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
⎯ 746 ⎯ pF
V
DS
= 40V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
⎯ 93 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 60 ⎯ pF
Total Gate Charge (Note 11) Q
g
⎯ 19 ⎯ nC
V
DS
= 30V, V
GS
= 10V,
I
D
= 2.5A (refer to test circuit)
Gate-Source Charge (Note 11) Q
gs
⎯ 2.3 ⎯ nC
Gate-Drain Charge (Note 11) Q
gd
⎯ 4.1 ⎯ nC
Turn-On Delay Time (Note 11) t
D(on)
⎯ 3.4 ⎯ ns
V
DD
= 30V, V
GS
= 10V
I
D
= 2.5A, R
G
≅ 6Ω
(refer to test circuit)
Turn-On Rise Time (Note 11) t
r
⎯ 2.8 ⎯ ns
Turn-Off Delay Time (Note 11) t
D(off)
⎯ 20 ⎯ ns
Turn-Off Fall Time (Note 11) t
f
⎯ 7.7 ⎯ ns
Notes: 6. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
7. For a device surface mounted on FR-4 PCB measured at t
≦ 5 secs.
8. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10μs - pulse width limited by maximum junction temperature.
9. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperatures.
11. For design aid only, not subject to production testing.