Diodes ZVN4306A - Manual (Page 3)

ZVN4306A
Document number: DS33367 Rev. 4 - 2
3 of 6
www.diodes.com
January 2012
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A Product Line of
Diodes Incorporated
ZVN4306A
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV
DSS
60 - - V V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current T J = 25°C I DSS
- -
1
20
µA
V
DS
= 60V, V
GS
= 0V
V DS = 48V, V GS = 0V, T A = 125°C
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
On-State Drain Current I
D(on)
12 - - A V
GS
= 10V, V
DS
= 10V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(th)
1.3 - 3 V V
DS
= V
GS
, I
D
= 1mA
Static Drain-Source On-Resistance R
DS (on)
-
0.22
0.32 0.33
0.45
Ω
V
GS
= 10V, I
D
= 3A
V
GS
= 5V, I
D
= 1.5A
Forward Transconductance g fs
700 - - mS V DS = 10V, I D = 3A
DYNAMIC CHARACTERISTICS (Note 4)
Input Capacitance
C iss
- - 350 pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- - 140 pF
Reverse Transfer Capacitance C
rss
- - 30 pF
Turn-On Delay Time (Note 5) t
d(on)
- - 8 ns
V
DD
= 25V, I
D
= 3A, V
GEM
= 10V
Turn-On Rise Time (Note 5) t
r
- - 25 ns
Turn-Off Delay Time (Note 5) t
d(off)
- - 30 ns
Turn-Off Fall Time (Note 5) t
f
- - 16 ns
Notes: 4. Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2%
5. Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator