Diodes ZXMN6A07F - Manual (Page 4)

ZXMN6A07F
Document Number DS33547 Rev. 7 - 2
4 of 8
www.diodes.com
October 2012
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A Product Line of
Diodes Incorporated
ZXMN6A07F
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60 ⎯ ⎯ V I
D
= 250 μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 μA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0 ⎯ 3.0 V I
D
= 250 μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 10) R
DS (ON)
⎯ ⎯
0.250
Ω
V
GS
= 10V, I
D
= -1.8A
0.350 V
GS
= 4.5V, I
D
= -1.3A
Forward Transconductance (Notes 10 and 12) g
fs
⎯ 2.3 ⎯ S V
DS
= 15V, I
D
= 1.8A
Diode Forward Voltage (Note 10) V
SD
⎯ 0.8 0.95 V T
J
= +25°C, I
S
= 0.45A, V
GS
= 0V
Reverse Recovery Time (Note 12) t
rr
⎯ 20.5 ⎯ ns T
J
= +25°C, I
F
= 1.8A,
di/dt = 100A/ μs Reverse Recovery Charge (Note 12) Q
rr
⎯ 21.3 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
C
iss
⎯ 166 ⎯
pF
V
DD
= 40V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 19.5 ⎯
Reverse Transfer Capacitance C
rss
⎯ 8.7 ⎯
Turn-On Delay Time (Note 11) t
D(on)
⎯ 1.8 ⎯
ns
V
DD
= 30V, I
D
= 1.8A,
R
G
≅ 6.0Ω, V
GS
= 10V
Turn-On Rise Time (Note 11) t
r
⎯ 1.4 ⎯
Turn-Off Delay Time (Note 11) t
D(off)
⎯ 4.9 ⎯
Turn-Off Fall Time (Note 11) t
f
⎯ 2.0 ⎯
Total Gate Charge (Note 11) Q
g
⎯ 1.65 ⎯ nC
V
DS
= 30V, V
GS
= 5V,
I
D
= 1.8A
Total Gate Charge (Note 11) Q
g
⎯ 3.2 ⎯
nC
V
DS
= 30V, V
GS
= 10V,
I
D
= 1.8A
Gate-Source Charge (Note 11) Q
gs
⎯ 0.67 ⎯
Gate-Drain Charge (Note 11) Q
gd
⎯ 0.82 ⎯
Notes: 10. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing.