Diodes ZXMN6A08G - Manual

Issue 1 - May 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXMN6A08G
60V SOT223 N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT223 package
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device marking
ZXMN
6A08
V
(BR)DSS
R
DS(on)
( ⍀) I
D
(A)
60
0.080 @ VGS = 10V 5.3
0.150 @ VGS = 4.5V 2.8
Device Reel size
(inches)
Tape width
(mm)
Quantity per
reel
ZXMN6A08GTA 7 12 1,000
ZXMN6A08GTC 13 12 4,000
D
S
G
D
Pinout - top view
S
D
G