Zxmn6a08k, Electrical characteristics – Diodes ZXMN6A08K User Manual
Page 4
ZXMN6A08K
Document Revision: 2
4 of 8
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A08K
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60
⎯
⎯
V
I
D
= 250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
0.5
μA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
⎯
3.0 V
I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 7)
R
DS (ON)
⎯
⎯
0.080
Ω
V
GS
= 10V, I
D
= 4.8A
0.150
V
GS
= 4.5V, I
D
= 4.2A
Forward Transconductance (Notes 7 & 8)
g
fs
⎯
6.6
⎯
S
V
DS
= 15V, I
D
= 4.8A
Diode Forward Voltage (Note 7)
V
SD
⎯
0.88 0.95 V
I
S
= 4.0A, V
GS
= 0V
Reverse recovery time (Note 8)
t
rr
19.2
⎯
ns
I
S
= 1.4A, di/dt= 100A/
μs
Reverse recovery charge (Note 8)
Q
rr
⎯
30.3
⎯
nC
DYNAMIC CHARACTERISTICS (
Note 8
)
Input Capacitance
C
iss
⎯
459
⎯
pF
V
DS
= 40V, V
GS
= 0V
f= 1MHz
Output Capacitance
C
oss
⎯
44.2
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
24.1
⎯
pF
Total Gate Charge
Q
g
⎯
3.8
⎯
nC
V
GS
= 4.5V
V
DS
= 30V
I
D
= 1.4A
Total Gate Charge
Q
g
⎯
5.8
⎯
nC
V
GS
= 10V
Gate-Source Charge
Q
gs
⎯
1.4
⎯
nC
Gate-Drain Charge
Q
gd
⎯
1.9
⎯
nC
Turn-On Delay Time (Note 9)
t
D(on)
⎯
2.6
⎯
ns
V
DD
= 30V, V
GS
= 10V
I
D
= 1.5A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 9)
t
r
⎯
2.1
⎯
ns
Turn-Off Delay Time (Note 9)
t
D(off)
⎯
12.3
⎯
ns
Turn-Off Fall Time (Note 9)
t
f
⎯
4.6
⎯
ns
Notes:
7. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.