Diodes ZXMN6A09DN8 - Manual

Issue 6 - January 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXMN6A09DN8
60V SO8 N-channel enhancement mode MOSFET
Summary
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOIC package
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device marking
ZXMN
6A09D
V
(BR)DSS
R
DS(on)
(
⍀)
I
D
(A)
60
0.040 @ V
GS
= 10V 5.6
0.060 @ V
GS
= 4.5V 4.6
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN6A09DN8TA 7 12 500
D2
S2
G2
D1
S1
G1
D1 S1
G1
S2
G2
Top view
D1
D2
D2