Diodes ZXMN6A11DN8 User Manual
Diodes Hardware
Advertising
© Zetex Semiconductors plc 2006
ZXMN6A11DN8
60V SO8 Dual N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
Applications
•
DC-DC converters
•
Power management functions
•
Motor control
Ordering information
Device marking
ZXMN
6A11D
V
(BR)DSS
R
DS(on)
(
⍀)
I
D
(A)
60
0.120 @ V
GS
= 10V
3.2
0.180 @ V
GS
= 4.5V
2.6
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN6A11DN8TA
7
12
500
D2
S2
G2
D1
S1
G1
D1
S1
G1
S2
G2
Pin out - top view
D1
D2
D2
Advertising