Diodes ZXMN6A11Z - Manual (Page 3)

ZXMN6A11Z
Document number DS33557 Rev. 4 - 2
3 of 7
www.diodes.com
December 2011
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
ZXMN6A11Z
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1.0
μA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - 100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1 - 2.2 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance (Note 7) R
DS (ON)
-
- 120
mΩ
V GS = 10V, I D = 2.5A
- 180 V
GS
= 4.5V, I
D
= 2A
Forward Transconductance (Note 7 & 9) g
FS
- 4.9 - S V
DS
= 15V, I
D
= 2.5A
Diodes Forward Voltage (Note 7) V
SD
- 0.85 0.95 V T
J
= 25 °C, I
S
= 2.8A, V
GS
= 10V
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 8 & 9)
C
iss
- 330 - pF
V
DS
= 40V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance (Note 8 & 9) C oss
- 35.2 - pF
Reverse Transfer Capacitance (Note 8 & 9) C
rss
- 17.1 - pF
Gate Charge (Note 8 & 9) Q
g
- 3 - nC V
GS
= 5V, V
DS
= 15V, I
D
= 2.5A
Total Gate Charge (Note 8 & 9) Q
g
- 5.7 - nC
V
GS
= 10V, V
DS
= 15V,
I
D
= 2.5A
Gate-Source Charge (Note 8 & 9) Q
gs
- 1.25 - nC
Gate-Drain Charge (Note 8 & 9) Q
gd
- 0.86 - nC
Reverse Recovery Time (Note 9) t
rr
21.5 ns T
J
= 25 °C, I
S
= 2.5A,
di/dt = 100A/
μs
Reverse Recovery Charge (Note 9) Q rr
20.5 nC
Turn-On Delay Time (Note 8 & 9) t
D(on)
- 1.95 - ns
V
GS
= 10V, V
DD
= 30V,
R
G
= 6 Ω , I
D
= 2.5A
Turn-On Rise Time (Note 8 & 9) t
r
- 3.5 - ns
Turn-Off Delay Time (Note 8 & 9) t D(off)
- 8.2 - ns
Turn-Off Fall Time (Note 8 & 9) t
f
- 4.6 - ns
Notes: 7. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤2%.
8. Switching characteristics are independent of operating junction temperature.
9. For design aid only, not subject to production testing.
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