Diodes ZXMN6A25G - Manual (Page 4)

ZXMN6A25G
Issue 2 - November 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
STATIC
Drain-source breakdown voltage V
(BR)DSS
60 V I
D
= 250
␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
1.0
␮A V
DS
= 60V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
1 V I
D
= 250
␮A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
␮
s; duty cycle
Յ
2%.
R
DS(on)
0.050
⍀
V
GS
= 10V, I
D
= 3.6A
0.070
⍀
V
GS
= 4.5V, I
D
= 3.0A
Forward transconductance
(*) (‡) g
fs
10.2 S V
DS
= 15V, I
D
= 4.5A
Dynamic
(‡)
Input capacitance C
iss
1063 pF V
DS
= 30V, V
GS
=0V
f=1MHz
Output capacitance C
oss
104 pF
Reverse transfer capacitance C
rss
64 pF
Switching
(†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
Turn-on-delay time t
d(on)
3.8 ns V
DD
= 30V, I
D
= 1A
R
G
≅6.0W, V
GS
= 10V
Rise time t
r
4.0 ns
Turn-off delay time t
d(off)
26.2 ns
Fall time t
f
10.6 ns
Gate charge Q
g
11.0 nC V
DS
= 30V, V
GS
= 5V
I
D
= 1.4A
Total gate charge Q
g
20.4 nC V
DS
= 30V, V
GS
= 10V
I
D
= 1.4A
Gate-source charge Q
gs
4.1 nC
Gate Drain Charge Q
gd
5.1 nC
Source-drain diode
Diode forward voltage
(*) V
SD
0.85 0.95 V T
j
=25°C, I
S
= 5.5A,
V
GS
=0V
Reverse recovery time
(‡)
(‡) For design aid only, not subject to production testing.
t
rr
22.0 ns T
j
=25°C, I
S
= 2.2A,
di/dt=100A/ ␮s
Reverse recovery charge
(‡) Q
rr
21.4 nC