Diodes ZXMN6A25K - Manual (Page 2)

ZXMN6A25K
Issue 3 - Novmber 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 ␮s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz. copper, in
still air conditions.
Parameter Symbol Limit Unit
Drain-source voltage V
DSS
60 V
Gate-source voltage V
GS
±20 V
Continuous drain current @ V
GS
= 10V; T
amb
=25°C
(b) I
D
10.7 A
@ V
GS
= 10V; T
amb
=70°C
(b) 8.6 A
@ V
GS
= 10V; T
amb
=25°C
(a) 7 A
Pulsed drain current
(c) I
DM
36 A
Continuous source current (body diode)
(b) I
S
11.8 A
Pulsed source current (body diode)
(c) I
SM
36 A
Power dissipation at T
amb
=25°C
(a) P
D
4.25 W
Linear derating factor 34 mW/°C
Power dissipation at T
amb
=25°C
(b) P
D
9.85 W
Linear derating factor 78.7 mW/°C
Power dissipation at T
amb
=25°C
(d) P
D
2.11 W
Linear derating factor 16.8 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
(a) R ⍜JA 29.4 °C/W
Junction to ambient
(b) R
⍜JA
12.7 °C/W
Junction to ambient
(d) R ⍜JA 59.1 °C/W