Diodes ZVN0124A - Manual (Page 3)

TYPICAL CHARACTERISTICS
Transconductance v drain current
I D(On) -Drain Current (Amps)
0 0.2 0.4 0.6 0.8 1.0
500
400
300
100
0
25V
V DS =
g
fs
-Fo
rwar
d
tr
a
nscond
u
c
tance
(
mS)
200
Transconductance v gate-source voltage
V GS -Gate-Source Voltage (Volts)
0 2 4 6 .8 10
500
400
300
100
0
25V
V DS =
200
g
fs
-F
o
rward tran
s con
d
uctan
c
e (m
S
)
Capacitance v drain-source voltage
C-Capacita
n
ce (
p
F
)
30
0
10
20
40
50
60
0 10 20 30 40 50
V DS -Drain-Source Voltage (Volts)
C iss
C oss
C rss
70
6
0
2
4
8
0 0.4 0.8 1.2 1.6 2.0
10
V GS
-
Gate-Source
V
o
lt
ag
e (
V
ol
ts
)
Gate charge v gate-source voltage
Q-Charge (nC)
I D= 700mA
50V
100V
V DS =
180V
0.2 0.6 1.0 1.4 1.8
Power v temperature derating curve (ambient)
40 80 120 160 200
P
D
-Power Dissipation (W
atts)
.20 60 100 140 180
T amb - Ambient Temperature (°C)
0.8
0.4
0.6
0.2
1.0
ZVN0124A
3-352