Diodes ZXMN7A11G - Manual

Issue 1 - March 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXMN7A11G
70V N-channel enhancement mode MOSFET
Summary
V
DSS
=70V : R
DS(on)
=0.13
⍀
I
D
=3.8A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT223 package
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
• Class D audio output stages
Ordering information
Device marking
ZXMN
7A11
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXMN7A11GTA 7 12 1,000
ZXMN7A11GTC 13 12 4,000
D
S
G