Diodes ZVN2110A User Manual
Zvn2110a, N-channel enhancement mode vertical dmos fet, Typical characteristics
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
*
R
DS(on)
= 4
Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
100 V
Continuous Drain Current at T
amb
=25°C I
D
320 mA
Pulsed Drain Current I
DM
6
A
Gate Source Voltage
V
GS
±
20 V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
100 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.8 2.4 V ID=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
1
100
µ
A
µ
A
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
On-State Drain Current(1) I
D(on)
1.5 A V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
4
Ω
V
GS
=10V,I
D
=1A
Forward Transconductance
(1)(2)
g
fs
250 mS V
DS
=25V,I
D
=1A
Input Capacitance (2) C
iss
75 pF
Common Source Output
Capacitance (2)
C
oss
25 pF V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
8
pF
Turn-On Delay Time (2)(3) t
d(on)
7
ns
V
DD
≈
25V, I
D
=1A
Rise Time (2)(3) t
r
8
ns
Turn-Off Delay Time (2)(3) t
d(off)
13 ns
Fall Time (2)(3) t
f
13 ns
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2%
(2) Sample test
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
Ω
E-Line
TO92 Compatible
ZVN2110A
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
Transfer Characteristics
2
4
6
8
10
0
20
40
60
80
100
Saturation Characteristics
V
DS-
Dr
ai
n S
o
u
rc
e
V
oltage (V
olts)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
0
2
4
6
8
10
2.8
2.4
1.6
0.4
0
0.8
2.0
1.2
I
D(
o
n
)
-On-State Drain Current (Amps)
V
DS=
10V
0
10
6
2
4
8
0
2
4
6
8
10
I
D=
1A
500mA
100mA
I
D(
o
n
)
-On-State Drain Current (Amps)
I
D(
o
n
)
-On-State Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (°C)
Normalised R
D
S(o
n
)
a
nd
V
G
S(
th
)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urce
R
es
ista
nc
e R
DS(
on
)
Gate Threshold Voltage V
GS(TH)
I
D=
1 A
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
180
0
0.8
0.4
1.2
2.0
1.6
8V
9V
7V
5V
4V
6V
3V
5V
4V
8V
6V
9V
7V
V
GS=
0
0.8
0.4
1.2
2.0
1.6
On-resistance v gate-source voltage
V
GS-
Gate Source Voltage
(Volts)
RDS(on
)-
D
ra
in So
u
rce
R
esis
tance
(
Ω
)
1 10 100
500mA
I
D
=
1A
100mA
1
10
5
V
GS=
10V
3V
10V
V
DS=
25V
ZVN2110A
3-365