Diodes ZVN2120G - Manual (Page 3)

ZVN2120G ZVN2120G
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TYPICAL CHARACTERISTICS
Output Characteristics
V DS - Drain Source Voltage (Volts)
2 4 6 8 10 0 10 20 30 40 50
Saturation Characteristics
V DS - Drain Source Voltage (Volts)
I D(on
)
-O
n-Sta
te Drain
Cur
ren
t (Amps)
I D(on
)
-O
n-Sta
te Drain
Cur
ren
t (Amps)
Normalised R DS(on) and V GS(th) v Temperature
T j -Junction Temperature (°C)
Normal
ised
R
DS(on)
and
V
GS(th)
-40 -20 0 20 40 60 80 120 100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n- So
urce
R es istan
ce
R DS(on
)
Gate Thresh
old Voltage V
GS(TH)
I D= 250mA
V GS= 10V
I D= 1mA
V GS= V DS
180
0
0.8
0.4
1.2
2.0
1.6
5V
4V
6V
3V
5V
4V
8V
6V
7V
V GS=
0
0.8
0.4
1.0
1.4
1.2
V DS-
D
ra
in Source
V
oltage (V
olts
)
Voltage Saturation Characteristics
V GS- Gate Source Voltage (Volts)
0
20
12
4
8
16
0 2 4 6 8 10
I D=
1.0A
0.5A
0.1A
8V
7V
V GS= 10V
2V
10V
2V
0.6
0.2
0
Transfer Characteristics
I D(O
n)
-O
n-Sta
te Dr
a
in
Cu
rren
t (Amps)
V GS- Gate Source Voltage (Volts)
0 1 2 3 4 5 6 7 8 9 10
V DS=
25V
0.8
0
1.6
1.2
0.6
1.4
1.0
0.4
0.2
10V
On-resistance vs gate-source voltage
V GS -Gate Source Voltage (Volts)
R
DS(ON)
-D
ra
in
Sourc
e R
e
si
s
ta
n
c
e
(
Ω )
1 2 3 4 5 6 7 8 9 10 20
I D=
1.0A
0.5A
0.1A
1
10
100
3V
TYPICAL CHARACTERISTICS
Transconductance v drain current
I D(on) - Drain Current (Amps )
g fs
-T
ranscon
duct
ance
(mS)
g fs
-T
ranscon
duct
ance
(
m
S)
Q-Charge (nC)
Transconductance v gate-source voltage
V GS -Gate Source Voltage (Volts)
V
G
S
-G
ate
Source
V
ol
tag
e (V
o
lts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V DS =
50V I D= 700mA
100V
150V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0 0.2 0.4 0.6 0.8 1.0
V DS= 25V
0
100
200
400
300
500
0 2 4 6 8 10
V DS= 25V
0
300
200
100
400
500
V DS -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C
-Capa
cita
nce (pF)
C oss
C iss
C rss
0 10 20 30 40 50
60
40
20
80
100
1.2 1.4 1.6 1.8 2.0