Diodes ZVN3320F - Manual

SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – DECEMBER 1995 ✪
FEATURES
* 200 Volt V
DS
* R
DS(on)
= 25
Ω
PARTMARKING DETAIL – MU
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
200 V
Continuous Drain Current at T
amb
=25°C I
D
60 mA
Pulsed Drain Current I
DM
1 A
Gate-Source Voltage V
GS
±
20 V
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BV
DSS
200 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage V
GS(th)
1.0 3.0 V I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
100 nA V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage
Drain Current I
DSS
10
50
µ
A
µ
A
V
DS
=200V, V
GS
=0V
V
DS
=160V, V
GS
=0V,
T=125°C (2)
On-State Drain Current(1) I
D(on)
250 mA V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1) R
DS(on)
25
Ω
V
GS
=10V,I
D
=100mA
Forward Transconductance(1)
(2) g
fs
75 mS V
DS
=25V,I
D
=100mA
Input Capacitance (2) C
iss
45 pF
Common Source
Output Capacitance (2) C
oss
18 pF V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2) C
rss
5 pF
Turn-On Delay Time (2)(3) t
d(on)
5 ns
V
DD
≈
25V, I
D
=100mA
Rise Time (2)(3) t
r
7 ns
Turn-Off Delay Time (2)(3) t
d(off)
6 ns
Fall Time (2)(3) t
f
6 ns
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
ZVN3320F
D
G
S
SOT23
3 - 398