Diodes ZVN4310A - Manual

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
= 0.5 Ω
* Spice model available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
100 V
Continuous Drain Current at T amb =25°C I D 0.9 A
Practical Continuous Drain Current at
T
amb =25°C
I
DP
1 A
Pulsed Drain Current I
DM
12 A
Gate Source Voltage V GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
850 mW
Practical Power Dissipation at T
amb
=25°C* P
totp
1.13 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BV DSS 100 V I D =1mA, V GS =0V
Gate-Source
Threshold Voltage V GS(th) 1 3 V ID=1mA, V DS = V GS
Gate-Body Leakage I GSS 20 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage
Drain Current I
DSS
10
100 µ A
µ A
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C (2)
On-State Drain
Current(1) I
D(on)
9 A V
DS
=25 V, V
GS
=10V
Static Drain-Source
On-State Resistance
(1) R
DS(on)
0.36
0.48 0.5
0.65 Ω
Ω
V
GS
=10V,I
D
=3A
V
GS
=5V, I
D
=1.5A
Forward
Transconductance
(1)(2) g
fs
600 mS V
DS
=25V,I
D
=3A
E-Line
TO92 Compatible
ZVN4310A
3-393
D
G
S
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Input Capacitance (2) C
iss
350 pF
Common Source
Output Capacitance
(2) C oss 140 pF V DS =25 V, V GS =0V, f=1MHz
Reverse Transfer
Capacitance (2) C rss 30 pF
Turn-On Delay Time
(2)(3) t
d(on)
8 ns
V
DD
≈ 25V, V
GEN
=10V, I
D
=3A
R GS =50 Ω Rise Time (2)(3) t
r
25 ns
Turn-Off Delay Time
(2)(3) t
d(off)
30 ns
Fall Time (2)(3) t f 16 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2%
(2) Sample test.
(3) Switching times measured with 50
Ω source impedance and <5ns rise time on a pulse generator
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
°C/W
°C/W
ZVN4310A
-40
0.50
0.25
0.0001
50
150
100
Derating curve
T -Temperature (°C)
Max Power Dissipation
- (W
atts)
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 100 1 0.1 0.01
1.0
0.75
-20 0 20 40 60 80 100 120 200 180 160 140
t 1
t P
D=t 1 /t P
Am
bie
nt t
empe
rat
ure
D.C.
D=0.6
D=0.2
D=0.1
Single Pulse
0.001
0
D=0.05
3-394